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november 2013 FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 1 FDD850N10LD boostpak (n-channel powertrench ? mosfet + diode) 100 v, 15.3 a, 75 m features ?r ds(on) = 61 m (typ.) @ v gs = 10 v, i d = 12 a ?r ds(on) = 64 m (typ.) @ v gs = 5.0 v, i d = 12 a ? low gate charge (typ. 22.2 nc) ? low c rss (typ. 42 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s powertrench ? process that has been tailored to mini- mize the on-state resistance while maintaining superior switching performance. the np diode is hyperfast rectifier with low forward voltage drop and excellent switching performance. applications ? led monitor backlight ? led tv backlight ? led lighting ? consumer appliances, dc-dc converter (step up & step down) 1 2 3 to252-5l 4 5 1. gate 2. source 3. drain / anode 4. cathode 5. cathode 3 4,5 1 2 maximum ratings t c = 25 o c unless otherwise noted. thermal characteristics symbol parameter FDD850N10LD unit v dss drain to source voltage 100 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) 15.3 a - continuous (t c = 100 o c) 9.7 i dm drain current - pulsed (note 1) 46 a e as single pulsed avalanche energy (note 2) 41 mj dv/dt peak diode recovery dv/dt (note 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 42 w - derate above 25 o c0.33w/ o c i f (av) diode average rectified forward current (t c = 138 o c) 5 a i fsm diode non-repetitive peak surge current 60 hz single half-sine wave 50 a t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for solderi ng, 1/8? from case for 5 seconds 300 o c symbol parameter FDD850N10LD unit r jc thermal resistance, junction to case for mosfet, max. 3.0 o c/w r jc thermal resistance, junction to case for diode, max. 2.5 r ja thermal resistance, junction to ambient, max. 87
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristi cs of the mosfet t c = 25 o c unless otherwise noted. off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics part number top mark package packing method reel size tape width quantity FDD850N10LD 850n10ld to-252 5l tape and reel 13? 16 mm 2500 units symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 100 - - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.1-v/ o c i dss zero gate voltage drain current v ds = 80 v, v gs = 0 v - - 1 a v ds = 80 v, t c = 125 o c - - 500 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.0-2.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 12 a - 61 75 m v gs = 5 v, i d =12 a - 64 96 g fs forward transconductance v ds = 10 v, i d = 15.3 a -31-s c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1 mhz - 1100 1465 pf c oss output capacitance - 80 105 pf c rss reverse transfer capacitance - 42 - pf q g(tot) total gate charge at 10v v ds = 80 v, i d = 15.3 a (note 4) - 22.2 28.9 nc q g(tot) total gate charge at 5v - 12.3 16.0 nc q gs gate to source gate charge - 3.0 - nc q gd gate to drain ?miller? charge - 5.7 - nc esr equivalent series resistance (g-s) f = 1 mhz - 1.75 - t d(on) turn-on delay time v dd = 50 v, i d = 15.3 a, v gs = 5 v, r g = 4.7 (note 4) -1744ns t r turn-on rise time - 21 52 ns t d(off) turn-off delay time - 27 64 ns t f turn-off fall time - 8 26 ns i s maximum continuous drain to source diode forward current - - 15.3 a i sm maximum pulsed drain to source diode forward current - - 46 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 12 a - - 1.3 v t rr reverse recovery time v gs = 0 v, i sd = 15.3 a, v ds = 80 v, di f /dt = 100 a/ s -38-ns q rr reverse recovery charge - 50 - nc notes: 1. repetitive rating: pulse-width limited by maximum junction temperature. 2. l = 1 mh, i as = 9.1 a, r g = 25 , starting t j = 25 c. 3. i sd 15.3 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c. 4. essentially independent of operating temperature typical characteristics.
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 3 electrical characteris tics of the diode t c = 25 o c unless otherwise noted. symbol parameter test conditions min. typ. max. unit v r dc blocking voltage i r = 250 a 150 - - v v fm maximum instantaneous forward voltage i f = 5 a t c = 25 o c- - 2.5 v t c = 125 o c- 0.9 - i rm maximum instantaneous reverse current @ rated v r t c = 25 o c- - 50 ua t c = 125 o c - - 1000 t rr diode reverse recovery time i f = 5 a, di/dt = 200 a/ s t c = 25 o c - 10.7 22 ns t c = 125 o c - 14.5 - i rr diode peak reverse recovery current t c = 25 o c- 2.2 5 a t c = 125 o c- 3.4 - q rr diode reverse recovery charge t c = 25 o c-11.7- nc t c = 125 o c - 24.7 - w avl avalanche energy (l = 40 mh) 10 - - mj
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 4 typical performance ch aracteristics - mosfet figure 1. on-region characteristics fi gure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 1 10 46 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 6.0v 5.0v 3.5v 3.0v 0246 0.1 1 10 46 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0 1020304050 0.00 0.04 0.08 0.12 0.16 0.20 *note: t c = 25 o c v gs = 10v v gs = 5v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 46 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0.1 1 10 100 10 100 1000 5000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12 16 20 24 0 2 4 6 8 10 *note: i d = 15.3a v ds = 20v v ds = 50v v ds = 80v v gs , gate-source voltage [v] q g , total gate charge [nc]
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 5 typical performance char acteristics - mosfet (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case tempe rature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 *notes: 1. v gs = 10 v 2. i d = 12 a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 0.1 1 10 100 200 0.01 0.1 1 10 100 100 s 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 3 6 9 12 15 18 r jc = 3.0 o c/w v gs = 5v v gs = 10v i d , drain current [a] t c , case temperature [ o c]
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 6 typical performance ch aracteristics - diode (continued) figure 11. diode forward voltage drop figure 12. diode reverse current vs. forward current vs. reverse voltage figure 13. diode junction capacitance figure 14. diode reverse recovery time vs. di/dt figure 15. diode reverse recovery figure 16. diode forward current current vs. di/dt derating curve 0.00.51.01.52.02.5 1 10 50 t c = 125 o c t c = 75 o c forward current, i f [a] forward voltage, v f [v] t c = 25 o c 20 40 60 80 100 120 0.1 1 10 100 1000 5000 t c = 75 o c t c = 25 o c t c = 125 o c reverse current , i r [na] reverse voltage, v r [v] 10 0.1 1 10 100 0 50 100 150 200 typical capacitance at 0v = 183 pf capacitances , cj [pf] reverse voltage, v r [v] 100 200 300 400 500 5 10 15 20 i f = 5a t c = 75 o c t c = 25 o c t c = 125 o c reverse recovery time, t rr [ns] di/dt [a/ s] 100 200 300 400 500 0 2 4 6 8 i f = 5a t c = 125 o c t c = 25 o c t c = 75 o c reverse recovery current, i rr [a] di/dt [a/ s] 25 50 75 100 125 150 0 5 10 15 20 25 30 average forward current, i f(av) [a] case temperature, t c [ o c]
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 7 typical performance characteristics (continued) figure 17. transient thermal response curve of mosfet figure 18. transient thermal response curve of diode 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 4 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 3.0 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 3 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2.5 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2 z jc (t), thermal response [ o c/w] t 1 , rectangular pulse duration [sec]
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 8 figure 19. gate charge test circuit & waveform figure 20. resistive switchin g test circuit & waveforms figure 21. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v gs i g = const.
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 9 figure 22. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 10 mechanical dimensions figure 23. to252 (d-pak), molded, 5-lead, option ad package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-005
FDD850N10LD ? boostpak (n-channel powertrench ? mosfet + diode) ?2013 fairchild semiconductor corporation FDD850N10LD rev. c2 www.fairchildsemi.com 11 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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voltageplus? xs? ? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing del ays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourage s customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fair child?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customer s to do their part in stopping this practice by buying direct or from authorized distributors. rev. i66 tm ?

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